Part Number Hot Search : 
TP297A 2N5152S TMU4N65H B59907 LTC3466 SMBJ30CA AT89C BGX885
Product Description
Full Text Search
 

To Download S30T200F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  mospec S30T200F dual schottky barrier power rectifiers using the schottky barrier principle with a refractory metal capable of high temperature operation metal. the proprietary barrier technology allows for reliable operation up to 150 junction temperature. ty pical application are in switching mode power supplies such as adaptors, dc/dc converters, free- wheeling and polarity protection diodes. features low forward voltage. low switching noise. high current capacity guarantee reverse avalanche. guard-ring for stress protection. low power loss & high efficiency. 150 operating junction temperature low stored charge majority carrier conduction. plastic material used carries underwriters laboratory flammability classification 94v-o in compliance with eu rohs 2002/95/ec directives mounting torqure: 5 in-lbs.max. schottky barrier rectifiers 30 amperes maximum ratings characteristic symbol S30T200F unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v rms reverse voltage v r(rms) 140 v average rectifier forward current ( per diode ) total device (rated v r ), i f(av) 15 30 a non-repetitive peak surge current (surge applied at rate load conditions halfware, single phase, 60hz) i fsm 230 a operating and storage junc tion temperature range t j , t stg -65 to +150 200 volts ito-220ab millimeters dim min max a 14. 80 1 6 .1 b 12.65 13.8 c 9.9 10.36 d 4.6 6.8 e 2.5 3.5 f 1.00 1.45 g 1.00 1.45 h 0.3 0.9 i 2.3 2.7 j 2.34 3.3 k 0.55 1.30 l 0.36 0.80 m 4.2 4.9 n 1.1 1.8 o 2.9 3.5 p 2.5 3.15 q 2.9 3.5 r thermal resistances typical thermal resistance junction to case ( per device ) r j-c 4 /w 3.1 3.8 electrical characteristics characteristic symbol min typ. max. unit maximum instantaneous forward voltage ( per diode ) ( i f =0.1 amp t c = 25 ) --- 0.41 --- ( i f =15.0 amp t c = 25 ) v f --- 0.91 0.93 v maximum instantaneous reverse current ( rated dc voltage, t c = 25 ) ( rated dc volta g e , t c = 125 ) i r -- -- 0.08 30 0.1 -- ma
S30T200F fig-1 forward current derating curve fig-2 typical forward characterisitics average forward rectified current (amp.) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 25 50 75 100 125 150 175 nstantaneous forward current (amp.) case temperature ( ) forward voltage (volts) fig-3 typical reverse characteristics fig-4 typical junction capacitance instantaneous reverse current (ma.) junction capacitance ( p f) reverse voltage ( % ) reverse voltage (volts) fig-5 peak forward surge current peak forward surge current (amp.) number of cycles at 60 hz ar-c


▲Up To Search▲   

 
Price & Availability of S30T200F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X